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Description

Flirt2D solves a set of partial differential equations to describe the interaction between a pulsed laser and semiconductors. The laser excitation of free-carriers is calculated for a silicon sample. The resulting diffusive transport is calculated for conduction band electrons and for holes. The thermal coupling between carriers and silicon lattice is calculated. Then phase transitions are calculated, considering the melting enthalpy.

Included features

Available material: Silicon <100>

Available laser parameters:

  • Wavelength from 300 nm to 2000 nm.

  • Pulse duration from 10 fs to 500 fs

Type of samples: semi-infinite slab (1D), slab sample (2D)

Physical model

  • Two-temperature model for femtoescond laser processing

  • Ambipolar diffusion

  • Heat and flow transport

  • Auger Recombination, Electron-hole pair generation.

  • Molten layer thickness with melting enthalpy

Diagnostics

  • Time-dependent pump-probe reflectivity (with another wavelength, angle of incidence, polarization)

  • Time-dependent transmittivity

  • Time-dependent change of optical refractive index

Publications

This code was used to produce the following publications:

  1. Y. Levy, T.J.-Y. Derrien, N.M. Bulgakova, E. Gurevich, T.Mocek, Applied Surface Science, DOI: doi:10.1016/j.apsusc.2015.10.159, http://www.sciencedirect.com/science/article/pii/S0169433215025787

  2. T.J.-Y. Derrien, J. Krüger, T.E. Itina, S. Höhm, A. Rosenfeld, J. Bonse, Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes, Applied Physics A 117, 77 (2014), Link.

  3. T. J.-Y. Derrien, J. Krüger, T.E. Itina, S. Höhm, A. Rosenfeld, J. Bonse, Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon, Optics Express 21, 29643 - 29655 (2013), Link

  4. T. J.-Y. Derrien, T. E. Itina, R. Torres, T. Sarnet, M. Sentis, ossible surface plasmon polariton excitation under femtosecond laser irradiation of silicon, Journal of Applied Physics 114, 083104 (2013), Link

  5. T.J.Y. Derrien, R. Torres, T. Sarnet, M. Sentis, T.E. Itina, Formation of femtosecond laser induced surface structures on silicon: insights from numerical modeling and single pulse experiments, Applied Surface Science Vol. 258, Issue 23, pp.9487-9490 (2012), Link

  6. T. J.-Y. Derrien, T. E. Itina, R. Torres, T. Sarnet, M. Sentis, Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interaction, Journal of Applied Physics 114, 083104 (2010), Link

Additional proofs of validation

  • Comparison on analytical cases is provided inside documentation.

  • Real-time energy conservation monitoring.

  • 1D and 2D version are >99% conservative.

  • Several debug modes are included: initial temperature boundary problem (1D, 2D), switch exist for all physical processes.

  • Routines to compare with several well-cited pump-probe publications are included.

  1. Sokolowski-Tinten, Klaus, and Dietrich von der Linde. "Generation of dense electron-hole plasmas in silicon." Physical Review B 61 (2000), 2643.

  2. Sabbah, A. J., and D. Mark Riffe. "Femtosecond pump-probe reflectivity study of silicon carrier dynamics." Physical Review B 66 (2002), 165217.

The code is available on

  • Linux (GCC, Intel Compiler)

  • IT4I/Salomon supercomputer (Czech Republic)

  • Code is compatible for distributed simulations over MPI.

Requirements

  • Lapack++

  • GNUplot

  • Bash/Awk

  • Good skills in bash linux.

Updated